I want to understand if EUV can have any impact on 10 nm or older nodes in a few years as EUV machines become more advanced and widely available. Almost all recent pre-EUV nodes use SADP, SAQP and a large number of masks to get the feature size lower than the diffraction limit of excimer lasers. It is conceivable that in future, as EUV machines become more widely available and advance, fabs would like to use the latest machines (highest power, lowest debris etc) for cutting edge nodes, freeing up some EUV machines. If so, it might make sense to use EUV for older nodes to reduce the cost of masks and increase WPH. This is total speculation on my part. I would like to know from experts if something like this could happen or if there is some other way EUV can impact older nodes or if EUV will never have any impact on 10 nm, 14 nm and older nodes. Since node names are not uniform across foundries, let's assume TSMC's nomenclature.