Impact of Design and Process on Alpha-Induced SER in 4 nm Bulk-FinFET SRAM
This paper evaluates alpha-induced soft error rate <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\boldsymbol{(\alpha \text{SER})}$</tex> by alpha irradiation test in four different SRAMs and simulation. The test result shows the impact of three...
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This interesting IRPS paper from Samsung earlier this year evaluates alpha-induced soft error rate (αSER) by alpha irradiation test in four different SRAMs and simulation.
Some interesting findings:
- The process technology going from 7 nm to 4 nm increases the αSER by 33%
- The #fin change (2-fin to 1-fin) decreases the αSER by 54 %
- The fin-pitch shrinking 10% increases the αSER by 17%.
The reason 4nm is worse than 7nm (dimensions being the same) is that the circuit is more sensitive (i.e., lower gate delay) to a smaller amount of charge.