Array
(
    [content] => 
    [params] => Array
        (
            [0] => /forum/index.php?search/243201/&t=thread&c[content]=thread&c[users]=chowdaiah04&o=date
        )

    [addOns] => Array
        (
            [DL6/MLTP] => 13
            [Hampel/TimeZoneDebug] => 1000070
            [SV/ChangePostDate] => 2010200
            [SemiWiki/Newsletter] => 1000010
            [SemiWiki/WPMenu] => 1000010
            [SemiWiki/XPressExtend] => 1000010
            [ThemeHouse/XLink] => 1000970
            [ThemeHouse/XPress] => 1010570
            [XF] => 2021370
            [XFI] => 1050270
        )

    [wordpress] => /var/www/html
)

Search results

  1. C

    I would like to know the approach using by tsmc , samsung , intel for SADP process ?

    For lower nodes like 10nm and 7nm , foundries are using SADP process for processing of Mx layers . I would like to know what is the approach using by tsmc/samsung/intel for these SADP layers ? The various approaches are 1. Traditional SID-SADP (Block Mask) 2. Mandrel Fill/Cut Mask SID-SADP...
  2. C

    why poly(transistor gate) orientation check is significant in leading edge tech

    what is the reason behind poly (transistor gate) orientation check in advanced process nodes ? Basically the check is like all the standard cells , memories , IP's need to have same poly orientation ( either horizantal or vertical ) . why not to use both orientations ?
  3. C

    what is reason for not allowing Mixed VT cells in a chip for FDSOI technology ?

    Hi In 22nm fdsoi technology , there were some design rules like VT spacing between SVT and LVT , SVT and HVT std cells so it is not possible to allow mixed VT in a chip . I want to know what was the reason for this ? is there any limitation from Manufacturing point of...
Back
Top