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This year’s Future of Memory and Storage Conference (formerly the Flash Memory Summit) was again very well attended. The Santa Clara Convention Center is definitely the place to be for a Silicon Valley Conference.
This post is about the Emerging Memories session organized by Dave Eggleston. We will be covering other sessions… Read More
The ferroelectric effect in materials has been exploited to fabricate (fab) reliable Ferroelectric Random Access Memories (FRAM) Non-Volatile Memory (NVM) ICs for over 20 years. Recent years have seen have seen a breakthrough in discovering ferroelectric properties in Hafnium Oxide (HfO2 or “hafnia”), a fab-friendly… Read More
