Double Patterning for IC Design, Extraction and Signoff

Double Patterning for IC Design, Extraction and Signoff
by Daniel Payne on 01-21-2013 at 3:27 pm

TSMC and Synopsys hosted a webinar in December on this topic of double patterning and how it impacts the IC extraction flow. The 20nm process node has IC layout geometries so closely spaced that the traditional optical-based lithography cannot be used, instead lower layers like Poly and Metal 1 require a new approach of using two… Read More