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I have an interesting application needing large amounts of ROM memory. Antifuse OTP ROM (Al or W) is an old technology from the 1990s. I'm wondering what the effect of Moore's law has been on it for the last thirty years. Is it possible to make OTP ROM like this at high density now? What kind of capacity is possible? The useful characteristic of OTP Antifuse is that it doesn't need a transistor for a cell.