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1d (arriving 2027) is largely seen as the last conventional (6F2) DRAM node. Then, different players have different paths. Some will go 4F2, some will skip, going directly to 3D.
This is a good reminder to maintain realistic expectations of China's progress.
We should also be reminded that many immersion-related patents from ASML and Nikon have expired or are expiring soon, so they will be in time to make use of the same technologies.
The Financial Times report was from September. That article cannot be accessed freely now.
Other reports based on that article are still available, such as: https://finance.yahoo.com/news/chinas-largest-chipmaker-testing-first-141115657.html
It is said to resemble ASML's Twinscan NXT:1950i...
Author: AXTEK Technology Company Limited
China’s leading foundry, SMIC (Semiconductor Manufacturing International Corp.), has begun testing a domestically manufactured immersion DUV lithography machine. According to the Financial Times, the tool was developed by Yuliangsheng, a Shanghai-based...
Abstract:
Stacked dynamic random access memory (DRAM) technology has garnered considerable attention as a means to continue the relentless pursuit of scaling. In this context, we have developed a five-layer horizontal cell with vertical word line (WL) and pillar capacitor to realize a stacked...
https://www.trendforce.com/news/2026/06/26/news-micron-reportedly-acknowledges-chinas-memory-progress-while-noting-output-remains-largely-domestic/
Amid market chatter that big tech firms are reportedly evaluating Chinese memory products, Micron, during its earnings call, acknowledged the...
Oh it's hardly a piece of cake. Transistor structure is all different. High aspect ratio capacitor. You can only get good margins from reuse of modules.
Reviving 3D XPoint might be easier and better timing.
DRAM would require substantially new process development and it is also an expensive process. In their recent collaboration with SAIMEMORY, they didn't provide the DRAM but the packaging technology.
SK hynix was most aggressive or active in promoting 4F2 at the VLSI conference this year. It looks like they're stopping the 6F2 architecture at 1d. The EUV is apparently a big burden, and they say 4F2 relieves this, besides providing electrical benefits. I find it hard to imagine more than 3...
Chinese companies like Gloway and KingBank, which provide DDR5 memory kits for consumer platforms, have started integrating domestically produced CXMT DDR5 memory into their RAM kits, effectively ending their reliance on DRAM from Micron, SK hynix, and Samsung after years of external dependence...
3D NAND is usually sold as TLC, but they can be operated in "pseudo-SLC" mode. It would be the only feasible way to raise endurance. There have been some SLC SSDs with 3D NAND with the much better endurance, such as Gigabyte.
