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Array
(
    [content] => 
    [params] => Array
        (
            [0] => /forum/search/601232/?c%5Busers%5D=Fred+Chen&o=date&page=5
        )

    [addOns] => Array
        (
            [DL6/MLTP] => 13
            [Hampel/TimeZoneDebug] => 1000070
            [SV/ChangePostDate] => 2010200
            [SemiWiki/EmailDomainReplace] => 1000010
            [SemiWiki/Newsletter] => 1000010
            [SemiWiki/WPMenu] => 1000010
            [SemiWiki/XPressExtend] => 1000010
            [ThemeHouse/XLink] => 1000970
            [ThemeHouse/XPress] => 1010570
            [XF] => 2031070
            [XFI] => 1060170
        )

    [wordpress] => /var/www/html
)

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  1. F

    Intel Prepares HBM Killer: HB3DM Memory Stacks with Z-Angle Technology

    Yes, I agree, I probably saw the same figures. So I think this paper is not about Z-Angle Memory. HB3DM is just something else they are trying. ZAM might still be under development. It is not mentioned in the abstract at all. TechPowerUp jumped the conclusion.
  2. F

    Intel Prepares HBM Killer: HB3DM Memory Stacks with Z-Angle Technology

    This is from the VLSI Technology 2026 symposium highlights recently released: https://www.vlsisymposium.org/wp-content/uploads/2026/04/2026-VLSI-Technical-Tipsheet-REVISED-FINAL-4.25.26-1-1.pdf PSMC is a DRAM foundry: https://www.powerchip.com/en-global/services/foundry-services
  3. F

    Intel Prepares HBM Killer: HB3DM Memory Stacks with Z-Angle Technology

    I think Intel is just responsible for the stacking part. The DRAM is from PSMC apparently. The logic base die, if it had been made on Intel 18A or Intel 3, I'm sure that would have been called out.
  4. F

    Intel Prepares HBM Killer: HB3DM Memory Stacks with Z-Angle Technology

    This is basically HBM, next generation. It's still vertically stacked DRAM dies with TSV connections on top of logic base die.
  5. F

    ASML as the last polite monopolist

    ASML knows it does not have much leverage with High-NA. They said so ("not prime time for High NA today") in their last quarterly earnings call. Along with Lam Research, they presented stochastic defectivity data with the latest, greatest dry resist this year, and it's still a big deal...
  6. F

    Industry faces “acute” CPU shortage with hope that Intel 18A yields improve

    Published: April 22, 2026 | Source: Digitimes | Author: Mark Campbell Industry hopes that Intel 18A can alleviate CPU shortages The world isn’t just facing a memory shortage; it’s also facing a CPU shortage. Intel is currently capacity-limited, meaning it cannot make enough CPUs to meet demand...
  7. F

    TSMC's refusal of ASML's expensive High-NA EUV equipment, explained

    That's right, xLight really needs ASML buyoff.
  8. F

    Nanya Technology becomes LPPDR5 supplier for NVIDIA

    Servers using NVIDIA's Vera Rubin CPU use LPPDR5X DRAM, and Nanya Technology has been reported to have become a supplier. Yet its technology stage is 2nd-generation 10nm-class, same level as CXMT's G3 process already available in 2024. It is also hinted that TSMC assisted with the stacking...
  9. F

    NEO Semiconductor's 3D X-DRAM for AI processors has passed proof-of-concept validation — company secures funding to develop next-gen HBM alternative

    These days, a new DRAM technology like IGZO, they often test to 1e11-1e12 cycles. Really we expect should go to 1e15 cycles, but that's 3 years of 100 ns cycles.
  10. F

    NEO Semiconductor's 3D X-DRAM for AI processors has passed proof-of-concept validation — company secures funding to develop next-gen HBM alternative

    From: https://www.thelec.net/news/articleView.html?idxno=6808 "The 10a node represents the first generation below 10 nanometers, with actual line widths estimated at around 9.5 to 9.7 nanometers." "The company plans to use the 4F² and VCT structures across three generations — 10a, 10b and 10c...
  11. F

    NEO Semiconductor's 3D X-DRAM for AI processors has passed proof-of-concept validation — company secures funding to develop next-gen HBM alternative

    By Etiido Uko published 17 hours ago Next-gen memory designed as a lower-cost, lower-power HBM alternative for AI workloads NEO Semiconductor 3D X-DRAM (Image credit: NEO Semiconductor) NEO Semiconductor announced on April 23rd that its 3D X-DRAM technology has successfully passed...
  12. F

    Exclusive: Intel Tells Staff It Will Disclose Scope Of Work With Elon Musk In ‘Coming Weeks’

    Intel licensing 14A process to Terafab is like weaning them off, if not creating a competitor.
  13. F

    Tesla Earnings Call - Intel 14A, Research (Tera)Fab details, Supplier Leverage?

    Indeed, with the targeted output of Terafab being so much larger, they'd become the foundry rival to Intel.
  14. F

    Tesla Earnings Call - Intel 14A, Research (Tera)Fab details, Supplier Leverage?

    So they wish to transfer the 14A process from Intel to Terafab?
  15. F

    Exclusive: Intel Tells Staff It Will Disclose Scope Of Work With Elon Musk In ‘Coming Weeks’

    By Dylan Martin April 14, 2026, 5:30 PM EDT ‘[Elon Musk’s] expansive vision across AI, transportation, communications, robotics and space travel relies heavily on an ample and uninterrupted supply of silicon chips. Intel is thus a natural partner to help him realize his vision,’ Intel CEO...
  16. F

    ASML lifts 2026 forecast as surging AI chip demand boosts new orders

    Going by this latest reference: https://www.semi.org/sites/semi.org/files/2023-11/07%20Carlo%20Luijten%20NNNN.pdf The throughput is reduced 27.5% by going from 30 to 60 mJ/cm2, so from 220 WPH to 160 WPH, for example.
  17. F

    ASML lifts 2026 forecast as surging AI chip demand boosts new orders

    He's still quoting throughput at 30 mJ/cm2, should be at 60 mJ/cm2. I wonder how bad it is at that dose.
  18. F

    ASML lifts 2026 forecast as surging AI chip demand boosts new orders

    Sharp drop in ArFi revenue, could that be China?
  19. F

    Samsung GAA SF2, Exynos 2600, cross-section images

    Yes.
  20. F

    Samsung GAA SF2, Exynos 2600, cross-section images

    It looks like their "M0" shows 6 tracks (4 signal lines + 2 rails): So if it's 168 nm cell height, the M0 is actually 28 nm pitch.
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