You are currently viewing SemiWiki as a guest which gives you limited access to the site. To view blog comments and experience other SemiWiki features you must be a registered member. Registration is fast, simple, and absolutely free so please, join our community today!
I have few quires about modelling NBTI Trapping/Detrapping Model Based on Predictive Technology Model (PTMs) firstly for CMOS and then FinFETs for smaller tech. nodes such as 16nm/22nm/32nm/45nm.
Q1: What material PTM (CMOS and FinFETs) models used for Gate-Oxide (e.g. Aluminium oxide Al₂O₃ or Hafnium oxide HfO₂ etc...)?
Q2: Based on above material, what is the typical trap density (i.e. number of traps/cm^2) for 16nm/22nm/32nm/45nm PTMs?
Q3: What is the typical Activation Energy (Ea) value for trapped charge emission? and what is its' range?
PTM is a spice model, which does't really care the material. Just a quick look at the Cit, interface charge, in their model, you can find it was 0 in 2008 and jumped to 1.3e-5 in 2012 for all the tech nodes. It means that they do not model the gate material. I would suggest you to spend some time on ab initio. Ea varies in real practice. The effort to get a clue from publication would be similar as the effort to get along with ab initio.
My humble advice: Calibrate the model with your own testing or simulation data. You can change Cit from 0 to 1.3e-5 to 2e-5 to see what is changing and link to your NBTI work.
Thank you (Grazie) for your quick and accurate reply; I was wondering that PTM/NIMO Arizona state Univ group have published several papers on NBTI trapping detrapping, and if they have tested them on PTMs, then Q is remain the same. That what material they consider in order to count the trap density?
