This is based on the recent SPIE paper 1151712: J. van Schoot et al., "High-NA EUV Lithography Exposure Tool: Advantages and Program Progress," Proc. of SPIE vol. 11517, 1151712 (c) 2020 SPIE. The high-NA tool is projected to be a little (~10%) faster for best case, but more so for the slower cases. The slower cases are expected for higher doses, which would be mandated by stochastic defect concerns.