Dietrich von Diemar set up a new group on LinkedIn "Scanning Frequency Comb Spectroscopy and Microscopy" for discussion of the new method which I have alluded to previously here in the Open Forum on SemiWiki.com. I invite those who are interested in the need for true sub-nm carrier profiling, which i feel to be essential at and below the 7-nm technology node, to see the simulators which we have made and provide their comments on this technology.
New Linkedin group set up for discussion of new method for sub-nm carrier profiling
- Thread starter mhagmann
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Can you include a link?
In my experience LinkedIn Groups are not great for detailed discussions since your work info is connected to it. If you want we can set up a forum on SemiWiki and give it a try? Let me know how it goes.
In my experience LinkedIn Groups are not great for detailed discussions since your work info is connected to it. If you want we can set up a forum on SemiWiki and give it a try? Let me know how it goes.
Daniel: Please give me your suggestions as to how to set up such a forum on SemiWiki. However, rather than focusing on the new technology we are developing, I think that it should address the need to establish standards for Failure Analysis that are suitable at and below the 7-nm node--because there are none.
The 1997 NTRS Roadmap for Semiconductors did not mention carrier profiling. However, it suggested that the resolution for dopant profiling be a value which was 1.4 percent of the finest node dimension used at that time. Now, this would correspond to 0.1 nm at the 7-nm node. Later national and international roadmaps have not mentioned the resolution for either carrier or dopant profiling. I have examined the SEMI standards and find that they provide no guidance for carrier profiling below the 90-nm node which was introduced in 2004. Thus, at present there is no suggested procedure for Failure Analysis at or below the 7-nm node.
The 1997 NTRS Roadmap for Semiconductors did not mention carrier profiling. However, it suggested that the resolution for dopant profiling be a value which was 1.4 percent of the finest node dimension used at that time. Now, this would correspond to 0.1 nm at the 7-nm node. Later national and international roadmaps have not mentioned the resolution for either carrier or dopant profiling. I have examined the SEMI standards and find that they provide no guidance for carrier profiling below the 90-nm node which was introduced in 2004. Thus, at present there is no suggested procedure for Failure Analysis at or below the 7-nm node.