One year ago, we posted a VI simulating the full operation of an STM (www.newpathresearch.com). Then we implemented this software to complete and optimize a working STM. Now we posted a second VI simulating the full operation of a new instrument for Scanning Frequency Comb Microscopy (SFCM) and we will implement it in a new instrument for sub-nm resolution carrier profiling of semiconductors (pat.pend.). In October advanced cell-phones were marketed that are based on devices at the 7-nm technology node from TSMC as the only source, and TSMC expects to ship at the 5-nm node in 2019. Advanced lithography can fabricate devices below the 7-nm node. However, present methods for carrier profiling have a resolution no finer than 10 nm so they are not adequate for fault localization or failure analysis. Our new VI is based on the analysis and simulations in our paper published December 4[SUP]th[/SUP] [1].
This material is based upon work supported by the National Science Foundation under Grant No. 648811.
[1] M.J. Hagmann, “Scanning frequency comb microscopy—A new method in scanning probe microscopy”, AIP Adv. 8 (2018) 125203, doi:10.1063/1.5047440.
This material is based upon work supported by the National Science Foundation under Grant No. 648811.
[1] M.J. Hagmann, “Scanning frequency comb microscopy—A new method in scanning probe microscopy”, AIP Adv. 8 (2018) 125203, doi:10.1063/1.5047440.