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IEDM 2020 paper 9.2 by TSMC seems to have indirectly given away the MMP (30% down from 7nm). The patterning is also interestingly termed as "the finest of EUV approaches", which has to be double patterning (single patterning is no longer mentioned). The 3D mask effect itself at 28 nm pitch is already too serious: https://en.wikipedia.org/wiki/Extre...dia/File:Image_asymmetry_across_EUV_pupil.png (not mentioning the stochastics).