BEGIN:VCALENDAR
VERSION:2.0
PRODID:-//SemiWiki - ECPv6.17.2//NONSGML v1.0//EN
CALSCALE:GREGORIAN
METHOD:PUBLISH
X-WR-CALNAME:SemiWiki
X-ORIGINAL-URL:https://semiwiki.com
X-WR-CALDESC:Events for SemiWiki
REFRESH-INTERVAL;VALUE=DURATION:PT1H
X-Robots-Tag:noindex
X-PUBLISHED-TTL:PT1H
BEGIN:VTIMEZONE
TZID:America/Los_Angeles
BEGIN:DAYLIGHT
TZOFFSETFROM:-0800
TZOFFSETTO:-0700
TZNAME:PDT
DTSTART:20250309T100000
END:DAYLIGHT
BEGIN:STANDARD
TZOFFSETFROM:-0700
TZOFFSETTO:-0800
TZNAME:PST
DTSTART:20251102T090000
END:STANDARD
BEGIN:DAYLIGHT
TZOFFSETFROM:-0800
TZOFFSETTO:-0700
TZNAME:PDT
DTSTART:20260308T100000
END:DAYLIGHT
BEGIN:STANDARD
TZOFFSETFROM:-0700
TZOFFSETTO:-0800
TZNAME:PST
DTSTART:20261101T090000
END:STANDARD
BEGIN:DAYLIGHT
TZOFFSETFROM:-0800
TZOFFSETTO:-0700
TZNAME:PDT
DTSTART:20270314T100000
END:DAYLIGHT
BEGIN:STANDARD
TZOFFSETFROM:-0700
TZOFFSETTO:-0800
TZNAME:PST
DTSTART:20271107T090000
END:STANDARD
END:VTIMEZONE
BEGIN:VEVENT
DTSTART;VALUE=DATE:20260927
DTEND;VALUE=DATE:20261003
DTSTAMP:20260824T081206Z
CREATED:20260824T081206Z
LAST-MODIFIED:20260824T081206Z
UID:372598-1790467200-1790985599@semiwiki.com
SUMMARY:ICSCRM 2026
DESCRIPTION:On behalf of the organizing committee\, it is my great honor and pleasure to welcome you to Yokohama\, Japan\, for the 23rd International Conference on Silicon Carbide and Related Materials (ICSCRM 2026)\, September 27－October 2\, 2026. \nThe ICSCRM conference series is the premier international forum focusing on all aspects of silicon carbide and related materials. With the goal of achieving carbon neutrality through significant energy savings\, the importance of low-loss power devices using silicon carbide and related materials is increasing. Currently\, efforts are being made to enhance the materials\, improve the performance and reliability of the devices\, and increase productivity to expand practical applications. Ongoing work to develop implementation and circuit technologies to fully utilize the device performance also continues. In the basic research field\, new developments such as applications in harsh environments and quantum sensing are underway. \nIn this context\, we have planned ICSCRM 2026 to bring researchers and engineers together to exchange the latest research and development results and share information on state-of-the-art technologies and products in the field of silicon carbide and related materials. We also hope to create opportunities for international exchanges among researchers and engineers in this field. Your attendance in scientific discussions and technical exhibitions will enhance the outcome of ICSCRM 2026 and create further steps for the future. \nOnce again\, we welcome all presenters\, participants\, exhibitors\, and sponsors to ICSCRM 2026 and hope all attendants enjoy the conference. \nSincerely\, \n\nHidekazu Tsuchida (CRIEPI)\nGeneral Chair\, ICSCRM 2026 \nScope\nThe aim of this conference is to discuss recent advances in crystal growth\, characterization\, control of material properties\, device fabrication and packaging technologies\, system applications as well as quantum applications concerning silicon carbide (SiC) and related materials including nitride-\, oxide- and diamond-based materials. \nIn addition\, it will discuss latest research results in device design\, fabrication\, characterization\, packaging\, and system applications to improve device performance and reliability\, and address to contribute the realization of cutting edge devices and systems for green innovation. \nThe conference also serves as an international forum for the exchange of ideas on recent scientific and technical issues among researchers and engineers in industrial\, academic and public sectors. \nThe scope of this conference covers the following topics on silicon carbide and related materials\, including other wide bandgap (WBG) semiconductors such as III-nitrides\, oxides\, and diamond. \nTopics\n\nMaterial and Growth\nBulk and epitaxial growth\, Wafer manufacturing \nDefects and Characterization\nFundamental properties\, Point and extended defects\, Characterization and imaging techniques\, Surface characterization and modification \nDevice Process and Characterization\nMOS interface and insulators\, Device fabrication processes (e.g. Implantation\, Oxidation\, Surface treatments\, Metallization\, Ohmic and Schottky contact formations\, and Dry etching technologies) \nDevice Physics\, Design\, and Characterization\nDevice design and testing\, Novel device concepts and Characterization\, Modelling and Simulation\, Novel measurements techniques \nDevices and Module Reliability\, Packaging\, and Applications\nModular and driver-circuit technologies\, System applications\, Packaging and device reliabilities \nQuantum Applications and Sensors\nTheoretical and experimental studies\, Optical and electrical quantum techniques\, for Magnetic\, Electric field\, and Temperature sensors\, Single-photon sources and detectors \n\nfor SiC and related materials including other wide bandgap semiconductors such as III-nitrides\, oxides\, and diamond. \nREGISTER HERE
URL:https://semiwiki.com/event/icscrm-2026/
LOCATION:PACIFICO Yokohama NORTH\, 1 Chome-1-2 Minatomirai\, Yokohama\, Kanagawa\, 220-0012\, Japan
ATTACH;FMTTYPE=image/png:https://semiwiki.com/wp-content/uploads/2026/08/Screenshot-2026-08-24-011055.png
END:VEVENT
END:VCALENDAR