WP_Term Object
(
    [term_id] => 72
    [name] => STMicroelectronics
    [slug] => stmicroelectronics
    [term_group] => 0
    [term_taxonomy_id] => 72
    [taxonomy] => category
    [description] => 
    [parent] => 14433
    [count] => 77
    [filter] => raw
    [cat_ID] => 72
    [category_count] => 77
    [category_description] => 
    [cat_name] => STMicroelectronics
    [category_nicename] => stmicroelectronics
    [category_parent] => 14433
    [is_post] => 
)

Positive pointers from Samsung, GF, Renesas, NXP/Freescale, ST, Soitec – so will 2016 be the year of FD-SOI?

Positive pointers from Samsung, GF, Renesas, NXP/Freescale, ST, Soitec – so will 2016 be the year of FD-SOI?
by Adele Hars on 02-10-2016 at 4:00 pm

A little over a month into 2016 and we already have a raft of FD-SOI news from Samsung, GlobalFoundries, NXP/Freescale, Renesas and more. Quite a bit of it came out of the recent SOI Consortium forum in Tokyo. Many of the presentations are now available on the SOI Consortium website (click here to see what’s there) – but keep checking… Read More


28nm FD-SOI: A Unique Sweet Spot Poised to Grow

28nm FD-SOI: A Unique Sweet Spot Poised to Grow
by Pawan Fangaria on 11-11-2015 at 12:00 pm

I have been silently watching STMicroelectronics pursuing FD-SOI technology since quite a few years. FinFET was anyway getting more attention in the semiconductor industry because of several factors involved. But from a technology as well as economic perspective there are many plus points with FD-SOI. I remember my debate,… Read More


FDSOI As a Multi-Node Platform

FDSOI As a Multi-Node Platform
by khaki on 09-13-2015 at 12:00 pm

One of the main criticisms of the FDSOI technology has been that it is a one-node solution at best and is not scalable to the future. Such arguments are typically based on the “gate-length-scaling” assumptions which do not capture the past and current trends of the CMOS technology as I discussed in my earlier post. Back in the early… Read More


FD-SOI: GlobalFoundries 22nm Update

FD-SOI: GlobalFoundries 22nm Update
by Paul McLellan on 08-26-2015 at 7:00 am

As I said yesterday, last week was the GSA Analog/Mixed-Signal working group completely dedicated to FD-SOI. ST went first and had a presentation that was a mixture of an introduction to FD-SOI that I have covered times that are too numerous to mention. Then they did a dive into analog and RF capabilities for FD-SOI that went very … Read More


FD-SOI: Samsung Opens the Kimono a Little

FD-SOI: Samsung Opens the Kimono a Little
by Paul McLellan on 08-25-2015 at 7:00 am

Last week there was a meeting of the GSA Analog/Mixed-Signal (AMS) working group. It was completely focused on FD-SOI (I hate that name, especially since FinFET is also fully-depleted. I vote for BoxFETs.) It was a bases loaded meeting with presentations from ST Microelectronics (calling in from France close to midnight), Samsung… Read More


UTBB SOI can scale down to 5nm says Skotnicki…

UTBB SOI can scale down to 5nm says Skotnicki…
by Eric Esteve on 07-29-2015 at 12:00 am

…and FinFET down to 3nm. This assertion is the result of extensive research work made by Thomas Skotnicki, ST Fellow and Technical VP, Disruptive Technologies, leading to numerous publications, like in 1988 in IEEE EDL or in 2008 in IEEE TED paper. I say extensive, I should also say long, very long, as it took almost 30 years for the… Read More


FD-SOI: a Gentle Introduction

FD-SOI: a Gentle Introduction
by Paul McLellan on 07-24-2015 at 7:00 am

Over the last couple of weeks, FD-SOI has been in the news with GlobalFoundries announcement of a 22nm FD-SOI process that will run in the Dresden Fab. Also, earlier in the week I talked to Thomas Skotnicki about the saga (and it is a saga) of how FD-SOI got from his PhD thesis to volume manufacturing and global deployment. But there … Read More


Thomas Skotnicki: FD-SOI 26 Years in the Making

Thomas Skotnicki: FD-SOI 26 Years in the Making
by Paul McLellan on 07-23-2015 at 7:00 am

It seems to be FD-SOI week yet again. I talked to Thomas Skotnicki this morning. He is the father of thin-box FD-SOI and its birth is an interesting story. The story began 26 years ago (so not quite as far back as the photo!).

Thomas is of Polish origins (he is actually Tomeczek) and grew up in Warsaw where he earned his PhD. In 1983 in Canterbury,… Read More


GlobalFoundries Endorse ST/LETI FD-SOI 22nm!

GlobalFoundries Endorse ST/LETI FD-SOI 22nm!
by Eric Esteve on 07-03-2015 at 9:00 am

The LETI days and the associated FD-SOI workshop took place in Grenoble (France) last week and I could not attend in person… but I had the opportunity to speak with LETI CEO Marie Semaria. Before going into details into the 3 key messages from the LETI (FD-SOI, Silicon Impulse and Cool Cube), it’s important to share the great news from… Read More